宫毛高

个人简介

宫毛高，男，1990年出生，澳门在线娱乐太阳集团(中国)有限公司讲师。2022年06月毕业于

南京大学，获“电子科学与技术”专业博士学位。

地址:安徽大学磬苑校区材料科学大楼H楼

邮箱: 22080@ahu.edu.cn

研究方向

1. 宽带隙半导体材料生长及光电子器件制备；2.等离激元衬底的设计及应用；3. 新型钙钛矿材料的生长及应用

教学情况

承担课程：«大学计算机基础» «工程制图»

科研情况

发表论文：

1. Maogao Gong, Weidong Xiang, Xiaojuan Liang, et al. Growth and characterization of air annealing Tb-doped YAG:Ce single crystal for white-light-emitting diode. Journal of Alloys and Compounds. 2015, 639: 611-616.

2. Maogao Gong, Weidong Xiang, Jun Huang, et al. Facile synthesis and optical properties of Ce:YAG polycrystalline ceramics with different SiO₂ content. RSC Advances. 2015, 5: 75781-75786.

3. Maogao Gong, Xiaojuan Liang, Weidong Xiang, et al. Novel synthesis and optical characterization of phosphor-converted WLED employing Ce:YAG-doped glass. Journal of Alloys and Compounds. 2016, 664: 125-132.

4. Maogao Gong, Kun Xing, Bin Liu, et al. Semi-polar (20-21) InGaN/GaN multiple quantum wells grown on patterned sapphire substrate with internal quantum efficiency up to 52 per cent. Applied Physics Express. 2020, 13: 091002. (Compound Semiconductor高亮报道）

5. Maogao Gong, Di Jiang, Tao Tao, et al. Surface plasmon coupling regulated CsPbBr₃ perovskite lasers in a metal-insulator-semiconductor structure. RSC Advances. 2021, 11: 37218-37224.

6. Feifan Xu, Bin Liu, Maogao Gong, et al. High-Performance Semi-polar InGaN/GaN Green Micro Light-emitting Diodes. IEEE Photonics Journal. 2020, 12(1): 1-7.

7. Jianguo Zhao, Maogao Gong, Bin Liu, et al. Epitaxial growth and characteristics of nonpolar a-plane InGaN films with blue-green-red emission and entire In content range. Chinese Physics Letters. 2022, 39(4): 048101.

专利：

1. 向卫东, 宫毛高, 梁晓娟. 一种Ce:YAG微晶玻璃及其在白光LED中的应用, 授权号: CN 104529166B.

2. 向卫东, 宫毛高, 梁晓娟. 一种Ce:YAG微晶玻璃及其制备方法和应用, 授权号: CN 105198224B.